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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

Name: Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching
Brand: VISHAY
Price: 1 USD

Brand Name : VISHAY

Model Number : IRFBC40PBF

Certification : Original Factory Pack

Place of Origin : Japan

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

VDS (V) : 600

RDS(on) (Ω) : VGS = 10 V

Qg (Max.) (nC) : 60

Qgs (nC) : 8.3

Qgd (nC) : 30

Configuration : Single

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Power MOSFET

Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

ORDERING INFORMATION
Package	TO-220
Lead (Pb)-free	IRFBC40PbF SiHFBC40-E3
SnPb	IRFBC40 SiHFBC40

Product Tags:

multi emitter transistor

silicon power transistors

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