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| SN74HC00DR | 4211 | TI | 15+ | SOP14 |
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| ICE2B265 | 4250 | | 14+ | DIP-8 |
| SS32-E3/57T | 4250 | VISHAY | 14+ | DO214 |
| SI3867 | 4258 | VISHAY | 14+ | SOT-163 |
| APM4953 | 4275 | APM | 16+ | SOP8 |
| LM1117MPX-5.0 | 4288 | NS | 16+ | SOT223 |
| 3224W-1-103E | 4300 | BOURNS | 13+ | SMD |
| TNY276GN | 4300 | POWER | 15+ | SOP-7 |
| MIC5235-1.8YM5 | 4300 | MICREL | 16+ | SOT23-5 |
| HCF4052BEY | 4399 | ST | 16+ | DIP |
| M82C51A-2 | 4400 | OKI | 14+ | DIP |
| MUR1620CTRG | 4400 | ON | 14+ | TO-220 |
| IRF7329 | 4412 | IR | 14+ | SOP-8 |
| HSMP-3816 | 4433 | AVAGO | 16+ | SOT153 |
| SMDJ54CA | 4440 | LITTELFUS | 16+ | SMD |
| GP1A51HR | 4444 | SHARP | 13+ | DIP-4 |
| P2804BDG | 4444 | NIKO | 15+ | TO252 |
| AP9962GH | 4450 | AP | 16+ | TO-252 |
| AD1955ARSZ | 4457 | AD | 16+ | SSOP-28 |
| AMS1083CT-3.3 | 4470 | AMS | 14+ | TO-220 |
| 1N4747A | 4500 | ST | 14+ | DO-41 |
| FDB8447L | 4500 | FSC | 14+ | TO-263 |
| INA118P | 4500 | TI | 16+ | DIP-8 |
| IRFR9024NTRPBF | 4500 | IR | 16+ | TO-252 |
| NL17SZ06 | 4500 | ON | 13+ | SOT553 |
| Q6040K7 | 4500 | LITTELFUS | 15+ | TO-3P |
| STM8324 | 4500 | SAMHOP | 16+ | SOP8 |
| TDA2050 | 4500 | ST | 16+ | ZIP |
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
| Symbol | Parameter | FQP50N06L | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) | 52.4 | A |
| 37.1 | A |
| IDM | Drain Current - Pulsed (Note 1) | 210 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 990 | mJ |
| IAR | Avalanche Current (Note 1) | 52.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 12.1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C | 121 | W |
| 0.81 | W/°C |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 | °C |
Package Dimensions
TO-220
Product Tags:
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FQP50N06 Power Mosfet Transistor npn general purpose transistor Images
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