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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

Brand Name : Anterwell

Model Number : IRFR9120N

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Pulsed Drain Current : -26 A

Power Dissipation : 40 W

Linear Derating Factor : 0.32 W/°C

Gate-to-Source Voltage : ± 20 V

Single Pulse Avalanche Energy : 100 mJ

Avalanche Current : -6.6 A

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IRFR/U9120N

HEXFET® Power MOSFET

• Ultra Low On-Resistance

• P-Channel

• Surface Mount (IRFR9120N)

• Straight Lead (IRFU9120N)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.6 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.2 A
IDM Pulsed Drain Current  -26 A
PD @TC = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 100 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 4.0 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ , TSTG​ Operating Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
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