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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Brand Name : TOSHIBA

Model Number : TPC8111

Certification : Original Factory Pack

Place of Origin : Taiwan

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 580PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

VDSS : −30 V

VDGR : −30 V

VGSS : ±20 V

ID : −11 A

PD : 1.9 W

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TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFETLithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V
Drain power dissipation (t = 10 s) PD 1.9 W
Drain power dissipation (t = 10 s) PD 1.0 W
Single pulse avalanche energy EAS 31.5 mJ
Avalanche current IAR −11 A
Repetitive avalanche energy EAR 0.19 mJ
Channel temperature Tch 150 °C

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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